Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMOS

IEEE Electron Device Letters

Volumn 23, Issue 6, 2002, Pages 354-356

  Misra, Veena ^a,b   Zhong, Huicai ^b   Lazar, Heather ^a,b  

^a IEEE   (United States)

^b North Carolina State University   (United States)

Author keywords

Advanced gatestacks; CMOS; Gate electrodes; Metal alloy; Metal gates; MOS transistors; Ru; Ru Ta; Ta

Indexed keywords

GATE ELECTRODES; RUTHENIUM TANTALUM ALLOY;

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRODES; GATES (TRANSISTOR); MAGNETRON SPUTTERING; MOSFET DEVICES; RUTHENIUM ALLOYS; SEMICONDUCTING SILICON; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

CMOS INTEGRATED CIRCUITS;

EID: 0036610805     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1004233     Document Type: Letter

References (11)

1. Impact of gate work-function on device performance at the 50nm technology node
2. The impact of high-κ gate dielectrics and metal gate electrode on sub-100nm MOSFETs
3. 2
4. Properties of Ru-Ta alloys as gate electrodes for NMOS and PMOS silicon devices
5. Dual work function metal gate CMOS technology using metal interdiffusion
6. 2 gate electrodes for dual metal gate Si-CMOS
7. Characterization of ultra-thin oxides using electrical C-V and I-V measurements
8. Critical front materials and processes for 50 nm and beyond IC devices
9. Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
10. A model for hot-electron-induced MOSFET linear current degradation based on mobility reduction due to interface-state generation