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Applied Physics Letters

Volumn 80, Issue 8, 2002, Pages 1403-1405

Electrical characteristics of TaSixNy/SiO 2/Si structures by Fowler-Nordheim current analysis

(3) Suh, You Seok a Heuss, Greg P a Misra, Veena a

a North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; BARRIER HEIGHTS; CAPACITANCE VOLTAGE; CURRENT ANALYSIS; ELECTRICAL CHARACTERISTIC; FOWLER-NORDHEIM; FOWLER-NORDHEIM TUNNELING; HIGH-TEMPERATURE ANNEALING; METAL OXIDE INTERFACE;

TANTALUM; WORK FUNCTION;

SILICON COMPOUNDS;

EID: 79956046005 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1453478 Document Type: Article

Times cited : (29)

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