Evaluation of thermal stability for CMOS gate metal materials

Journal of the Electrochemical Society

Volumn 151, Issue 12, 2004, Pages

  Cabral Jr , C ^a,b   Lavoie, C ^a,b   Ozcan, A S ^c   Amos, R S ^a,b   Narayanan, V ^a,b   Gusev, E P ^a,b   Jordan Sweet, J L ^a,b   Harper, J M E ^d  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

^c Boston University   (United States)

^d UNIVERSITY OF NEW HAMPSHIRE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ALUMINA; BINARY ALLOYS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; DISSOCIATION; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; LIGHT SCATTERING; RAPID THERMAL ANNEALING; SILICA; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

ATOMIC LAYER DEPOSITION (ALD); BINARY COMPOUNDS; ELASTIC LIGHT SCATTERING; GATE DIELECTRICS;

CMOS INTEGRATED CIRCUITS;

EID: 10944231297     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1811592     Document Type: Article

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