Tunable work function dual metal gate technology for bulk and non-bulk CMOS

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 359-362

  Lee, JaeHoon ^a   Zhong, Huicai ^a   Suh, You Seok ^a   Heuss, Greg ^a   Gurganus, Jason ^a   Chen, Bei ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; ELECTRODES; FABRICATION; GATES (TRANSISTOR); RUTHENIUM ALLOYS; SILICON;

METAL GATE ELECTRODES;

CMOS INTEGRATED CIRCUITS;

EID: 0036923598     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. J. R. Hauser et al, SRC working paper, 1997
2. I. De, et. al., Solid State Electronics, Vol.44, 2000.
3. Y. Taur, Vol 48, IEEE-TED, Dec 2001
4. H. Zhong et al., IEEE IEDM 2001.
5. L. Qiang Lu, et al., IEEE VLSI Symp., 2001.
6. I. Polishchuk, IEEE EDL, Vol. 22, 2001.
7. R. Rao et. al., Surface Science, Vol. 327, p 293, 1995.