Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 11-17

  Schaeffer, J K ^a   Samavedam, S B ^a   Gilmer, D C ^a   Dhandapani, V ^a   Tobin, P J ^a   Mogab, J ^a   Nguyen, B Y ^a   White Jr , B E ^a   Dakshina Murthy, S ^a,b   Rai, R S ^a   Jiang, Z X ^a   Martin, R ^a   Raymond, M V ^a   Zavala, M ^a   La, L B ^a   Smith, J A ^a   Garcia, R ^a   Roan, D ^a   Kottke, M ^a,c   Gregory, R B ^a,c  

^a MOTOROLA INC   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CAPACITORS; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRODES; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; PERMITTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

DIELECTRIC THICKNESSES; GATE STACKS; METAL GATE ELECTRODES;

MOSFET DEVICES;

EID: 0037207676     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1529650     Document Type: Article

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