Tunable work function molybdenum gate technology for FDSOI-CMOS

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 363-366

  Ranade, Pushkar ^a   Choi, Yang Kyu ^c   Ha, Daewon ^c   Agarwal, Aditya ^b   Ameen, Michael ^b   King, Tsu Jae ^c  

^a Lawrence Berkeley National Laboratory   (United States)

^b AXCELIS TECHNOLOGIES   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTALLOGRAPHY; ION IMPLANTATION; MOLYBDENUM; SILICON WAFERS; THIN FILMS; THRESHOLD VOLTAGE; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

GATE DEPLETION EFFECTS;

CMOS INTEGRATED CIRCUITS;

EID: 0036923255     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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