Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications

IEEE Electron Device Letters

Volumn 25, Issue 2, 2004, Pages 70-72

  Yu, H Y ^a   Kang, J F ^a,c   Ren, C ^a   Chen, J D ^a   Hou, Y T ^a   Shen, C ^a   Li, M F ^a,b   Chan, D S H ^a   Bera, K L ^b   Tung, C H ^b   Kwong, D L ^d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c PEKING UNIVERSITY   (China)

^d The University of Texas at Austin   (United States)

Author keywords

HfN; HfO 2; High K gate dielectrics; Metal gate electrode; MOS devices

Indexed keywords

HFN; HFO2; HIGH-K GATE DIELECTRICS; METAL GATE ELECTRODES;

DEPOSITION; DIELECTRIC MATERIALS; DIFFUSION; ELECTRODES; GATES (TRANSISTOR); INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOS CAPACITORS; OXYGEN; PHYSICAL VAPOR DEPOSITION; QUANTUM THEORY; RAPID THERMAL ANNEALING; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

HAFNIUM COMPOUNDS;

EID: 10744227666     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.820649     Document Type: Article

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