Dual Work Function Metal Gates Using Full Nickel Silicidation of Doped Poly-Si

IEEE Electron Device Letters

Volumn 24, Issue 10, 2003, Pages 631-633

  Sim, J H ^a   Wen, H C ^a   Lu, J P ^b   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Dopant; Full silicidation; Interface state density; Metal gate; Work function

Indexed keywords

CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); NICKEL; POLYSILICON; SILICA;

SILICIDATION;

GATES (TRANSISTOR);

EID: 0141883941     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.817372     Document Type: Article

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