Characteristics of TaSi xN y thin films as gate electrodes for dual gate Si-complementary metal-oxide-semiconductor devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 175-179

  Suh, You Seok ^a   Heuss, Greg ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE ELECTRODES; GATE LEAKAGE;

AMORPHOUS MATERIALS; ANNEALING; CAPACITANCE; CHEMICAL BONDS; COPPER; ELECTRIC POTENTIAL; ELECTRODES; NITROGEN; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; TANTALUM COMPOUNDS; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 1642362989     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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