On the thermal stability of atomic layer deposited TiN as gate electrode in MOS devices

IEEE Electron Device Letters

Volumn 24, Issue 9, 2003, Pages 550-552

  Westlinder, J ^a   Schram, T ^b   Pantisano, L ^b   Cartier, E ^c   Kerber, A ^d   Lujan, G S ^b   Olsson, J ^a   Groeseneken, G ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b IMEC   (Belgium)

^c IBM RESEARCH   (United States)

^d INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Metal gate; RTP; Titanium nitride (TiN); Work function

Indexed keywords

ALUMINA; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRODES; MOS CAPACITORS; MOSFET DEVICES; OXIDATION; RAPID THERMAL ANNEALING; SILICA; SUBSTRATES; THERMODYNAMIC STABILITY;

ATOMIC LAYER DEPOSITED TITANIUM NITRIDE; GATA ELECTRODE; METAL GATE; WORK FUNCTION;

TITANIUM NITRIDE;

EID: 0141563618     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.816579     Document Type: Letter

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