Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide

IEEE International Reliability Physics Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 60-72

  Wu, E ^a   Lai, W ^a   Khare, M ^a   Sune J ^b   Han, L K ^a,c   McKenna, J ^a   Bolam, R ^a   Harmon, D ^a   Strong, A ^a  

^a IBM MICROELECTRONICS   (United States)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c Exploratory Research Division   (Taiwan)

Author keywords

Anodes; Breakdown voltage; Current measurement; Degradation; Design for quality; Electric breakdown; Microelectronics; Silicon on insulator technology; Temperature dependence; Thickness measurement

Indexed keywords

ANODES; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ELECTRIC INSULATORS; GATES (TRANSISTOR); MICROELECTRONICS; MOS DEVICES; RELIABILITY; SILICON ON INSULATOR TECHNOLOGY; TEMPERATURE DISTRIBUTION; THICKNESS MEASUREMENT;

DESIGN FOR QUALITIES; POSSIBLE MECHANISMS; SUBSTRATE INJECTION; SYSTEMATIC RELIABILITY; TEMPERATURE DEPENDENCE; TEMPERATURE INDEPENDENTS; ULTRA THIN GATE OXIDE; VOLTAGE ACCELERATION;

LEAKAGE CURRENTS;

EID: 0041803879     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996611     Document Type: Conference Paper

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