Determination of dielectric breakdown Weibull distribution parameters confidence bounds for accurate ultrathin oxide reliability predictions

Microelectronics Reliability

Volumn 41, Issue 9-10, 2001, Pages 1295-1300

  Monsieur, F ^a,b   Vincent, E ^a   Roy, D ^a   Bruyere, S ^a   Pananakakis, G ^b   Ghibaudo, G ^b  

^a STMICROELECTRONICS   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; EXTRAPOLATION; FAILURE ANALYSIS; RELIABILITY; STRESS ANALYSIS; WEIBULL DISTRIBUTION;

DIELECTRIC BREAKDOWN; ULTRATHIN OXIDES;

ULTRATHIN FILMS;

EID: 0035456835     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00183-4     Document Type: Article

References (8)

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3. F. Monsieur, Micro & Reliab (to be published)
4. E. Wu proceedings IRW 2000
5. G Barbottn et al., Instabilities in silicon Vol 1, 1986
6. B.P. Linder et al., Proc. IRPS 2001, pp 168
7. J. Jacquelin, IEEE Trans. Elec Ins. 28(1), 1993
8. J. Jacquelin, IEEE Trans. Elec. Ins. 3 (6), 1996