Tunneling current characteristics and oxide breakdown in P+ poly gate PFET capacitors

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 16-20

  McKenna, Jonathan M ^a   Wu, Ernest Y ^a   Lo, Shih Hsien ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ELECTRON TUNNELING; GATES (TRANSISTOR); POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

THERMO-CHEMICAL MODELS;

CAPACITORS;

EID: 0033732443     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (21)