Ultra-thin oxide reliability: Searching for the thickness scaling limit

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 697-701

  Degraeve, R ^a   Kaczer, B ^a   Groeseneken, G ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ENERGY GAP; LEAKAGE CURRENTS; OXIDES; ULTRATHIN FILMS;

SOFT BREAKDOWN; STRESS-INDUCED LEAKAGE CURRENTS;

SEMICONDUCTING FILMS;

EID: 0033731352     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00281-4     Document Type: Article

References (6)

1. Degraeve R, et al. IEEE Trans Elec Dev 1998;45 (4):904-11.
2. De Blauwe J, et al. IEDM Tech Dig 1996;343-6.
3. Wu E, et al. IEDM Tech Dig 1998;187-90.
4. Han LK, Bhat M, Wristers D, Fulford J, Kwong DL. IEDM Tech Dig 1994;617-20.
5. Nigam T, Degraeve R, Groeseneken G, Heyns MM, Maes HE. Proceedings IRPS, 1999;381-8.
6. Stathis JH, DiMaria DJ. IEDM Tech Dig 1998;167-70.