A new quantitative hydrogen-based model for ultra-thin oxide breakdown

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue TECHNOLOGY SYMP., 2001, Pages 97-98

  Sune J ^a   Wu, E ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); INTERFACES (MATERIALS); MOS DEVICES; PROTONS; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; SILICA; SURFACE CHEMISTRY; ULTRATHIN FILMS;

GATE OXIDES;

ELECTRIC BREAKDOWN;

EID: 0034784919     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)