Stress-induced leakage current (SILC) and oxide breakdown: Are they from the same oxide traps?

IEEE Transactions on Device and Materials Reliability

Volumn 1, Issue 2, 2001, Pages 109-112

  Pantisano, Luigi ^a,b   Cheung, Kin P ^a,b  

^a IMEC   (Belgium)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

Breakdown; Heat treatment; MOSFETs; SILC

Indexed keywords

EID: 0001660285     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/7298.956704     Document Type: Article

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