Oxide-voltage and its polarity dependence of interface-state-generation efficiency in (100) n-Si metal/oxide/semiconductor capacitors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 12 A, 1996, Pages 5921-5924

  Inoue, Masao ^a   Shimada, Akihiro ^a   Shirafuji, Junji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Degradation; Interface state generation efficiency; MOS capacitor; Si; Time dependent dielectric breakdown

Indexed keywords

FOWLER NORDHEIM TUNNELING CURRENT STRESS; GATE EMISSION; INTERFACE STATE GENERATION EFFICIENCY; OXIDE VOLTAGE; TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; ELECTRON EMISSION; ELECTRON TUNNELING; ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOS DEVICES; SEMICONDUCTING SILICON; SUBSTRATES;

CAPACITORS;

EID: 0030378496     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.5921     Document Type: Article

References (17)

1. D. R. Wolters and J. J. van der Schoot: Philips J. Res. 40 (1985) 137.
2. K. F. Schuegraf and C. Hu: IEEE Trans. Electron Devices 41 (1994) 761.
3. D. R. Wolters and A. T. A. Zegers-van Duynhoven: Proc. 1st Int. Symp. ULSI Sci. and Technol, Philadelphia, 1987(Electrochem. Soc., Pennington, 1987) p. 101.
4. D. R. Wolters and J. J. van der Schoot: Philips J. Res. 40 (1985) 164.
5. J. Suñé, I. Placencia, N. Barniol, E. Farrés, F. Martin, and X. Aymerich: Thin. Solid. Films 185 (1990) 347.
6. E. Avni and J. Shappir: J. Appl. Phys. 54 (1988) 743.
7. S. K. Lai: J. Appl. Phys. 54 (1983) 2540.
8. I. C. Chen, S. Holland, and C. Hu: J. Appl. Phys. 61 (1987) 4544.
9. H. Uchida and T. Ajioka: Appl. Phys. Lett. 51 (1987) 433.
10. D. J. DiMaria and E. Cartier: J. Appl. Phys. 78 (1995) 3883.
11. M. V. Fischetti: Phys. Rev. B 31 (1985) 2099.
12. Y. Lu and C. H. Sah: J. Appl. Phys. 76 (1994) 4724.
13. M. Inoue and J. Shirafuji: Mater. Res. Soc. Symp. Proc. 338 (1994) 69.
14. M. Inoue and J. Shirafuji: Technol. Rep. Osaka Univ. 44 (1994) 243.
15. M. Inoue and J. Shirafuji: to be published in J. Appl. Phys.
16. A. K. Jonscher and R. Lacoste: IEEE Trans. Electr. Insul. 19 (1984) 567.
17. L. A. Dissado and J. C. Fothergill: IEE Materials and Devices Series 9 (Peter Peregrimus Ltd., London, 1992) p. 317.