Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides

Solid-State Electronics

Volumn 46, Issue 11, 2002, Pages 1787-1798

  Wu, E ^a   Sune J ^b   Lai, W ^a   Nowak, E ^a   McKenna, J ^a   Vayshenker, A ^a   Harmon, D ^a  

^a IBM MICROELECTRONICS   (United States)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Gate dielectric; Oxide breakdown; TDDB; Ultra thin oxide reliability

Indexed keywords

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; STATISTICAL METHODS; THERMAL EFFECTS; ULTRATHIN FILMS;

GATE OXIDES;

GATES (TRANSISTOR);

EID: 0036839166     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00151-X     Document Type: Conference Paper

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