Polarity dependence of cumulative properties of charge-to-breakdown in very thin gate oxides

Solid-State Electronics

Volumn 41, Issue 7, 1997, Pages 995-999

  Brozek, T ^a,b   Szyper, E C ^a   Viswanathan, C R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CHARGE; GATES (TRANSISTOR); SEMICONDUCTOR DEVICE MODELS; THIN FILMS;

POLARITY DEPENDENT PROGRESSIVE WEAR OUT;

MOS DEVICES;

EID: 0031190029     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00012-9     Document Type: Article

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