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Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 137-147

A computational model for oxide breakdown: Theory and experiments

(5) Alam, M a Weir, B a Bude, J a Silverman, P a Ghetti, A a

a AGERE SYSTEMS (United States)

Author keywords

Computational models; Gate dielectric; Oxide reliability

Indexed keywords

CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); HOLE TRAPS; MATHEMATICAL MODELS; MOSFET DEVICES;

OXIDE BREAKDOWN;

ELECTRIC BREAKDOWN;

EID: 0035498671 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(01)00657-8 Document Type: Article

Times cited : (28)

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