Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1999, Pages 59-60

  Degraeve, R ^a   Pangon, N ^a   Kaczer, B ^a   Nigam, T ^a   Groeseneken, G ^a   Naem, A ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; FAILURE ANALYSIS; MOS DEVICES; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE; THICKNESS MEASUREMENT;

CONSTANT CURRENT STRESS; CONSTANT VOLTAGE STRESS; GATE VOLTAGE; POLARITY GAP; ULTRATHIN GATE OXIDE;

GATES (TRANSISTOR);

EID: 0033280127     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)