A new polarity dependence of the reduced trap generationduring high-field degradationof nitrided oxides

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 327-330

  Degraeve, R ^a   de Blauwe, J ^a   Ogier, J L ^a   Roussel, Ph ^a   Groeseneken, G ^a   Maes, H E ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

WEIBULL DISTRIBUTION; ALGORITHMS; ANNEALING; DEGRADATION; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; NITROGEN; STATISTICAL METHODS;

HIGH-FIELD; NITRIDED OXIDES; NITROGEN PROFILE; OXIDE TRAPS; POLARITY DEPENDENCE; TRAP GENERATION; WEIBULL;

ALUMINUM NITRIDE; OXIDES;

GATE OXIDES; NITRIDATION; OXIDE TRAP GENERATION; SUBSTRATE HOT ELECTRON INJECTION;

EID: 0030409315     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553595     Document Type: Conference Paper

References (6)

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