Temperature dependence of soft breakdown and wear-out in sub-3 nm SiO2 films

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 33-39

  Suehle, John S ^a   Vogel, Eric M ^a   Wang, Bin ^a   Bernstein, Joseph B ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; SEMICONDUCTING SILICON COMPOUNDS; SILICA; THERMAL EFFECTS; WEAR OF MATERIALS;

DIELECTRIC BREAKDOWN;

SEMICONDUCTING FILMS;

EID: 0033743236     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (18)