Effect of nitrogen profile on tunnel oxynitride degradation with charge injection polarity

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1491-1495

  Arakawa, Tomiyuki ^a   Matsumoto, Ryoichi ^a   Kita, Akio ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

Interface state density; Nitrogen profile; Reliability; Silicon oxynitride film; Stress bias polarity; Time dependent dielectric breakdown; Trap

Indexed keywords

ATOMS; DIELECTRIC PROPERTIES; ELECTRIC BREAKDOWN OF SOLIDS; FILM PREPARATION; INTERFACES (MATERIALS); NITRIDES; NITROGEN; OXIDATION; OXIDES; RELIABILITY;

CHARGE INJECTION POLARITY; INTERFACE STATE DENSITY; NITROGEN PROFILE; SILICON OXYNITRIDE FILM; STRESS BIAS POLARITY; TIME DEPENDENT DIELECTRIC BREAKDOWN; TRAP; TUNNEL OXYNITRIDE DEGRADATION;

THIN FILMS;

EID: 0030079695     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1491     Document Type: Article

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