Quantitative two-step hydrogen model of SiO2 gate oxide breakdown

Solid-State Electronics

Volumn 46, Issue 11, 2002, Pages 1825-1837

  Suñé, Jordi ^a   Wu, Ernest ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC BREAKDOWN; HEURISTIC METHODS; HYDROGEN; INTERFACES (MATERIALS); MATHEMATICAL MODELS; PROTONS; SILICA; THERMAL EFFECTS;

GATE OXIDES;

GATES (TRANSISTOR);

EID: 0036839287     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00156-9     Document Type: Conference Paper

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