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Volumn 1, Issue 1, 2001, Pages 69-80

New global insight in ultrathin oxide reliability using accurate experimental methodology and comprehensive database

Author keywords

CMOS reliability; Dielectric breakdown; MOS devices; TDDB; Ultrathin gate oxide

Indexed keywords


EID: 17644380079     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/7298.946461     Document Type: Article
Times cited : (41)

References (56)
  • 56
    • 33747937068 scopus 로고    scopus 로고
    • submitted for publication.
    • E. Wu et al., submitted for publication.
    • Wu, E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.