Quasi-breakdown in ultra-thin SiO2 films: Occurrence characterization and reliability assessment methodology

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2000, Pages 48-54

  Bruyere, S ^a   Vincent, E ^a   Ghibaudo, G ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICA; STATISTICAL METHODS; THERMAL EFFECTS; ULTRATHIN FILMS;

QUASI-BREAKDOWN PHENOMENON;

SEMICONDUCTING FILMS;

EID: 0033732597     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (24)