Analysis and optimization of stress conditions for gate oxide wearout using Monte Carlo simulation

International Integrated Reliability Workshop Final Report

Volumn , Issue , 2000, Pages 9-13

  Vollertsen, R P ^a   Strong, A ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALGORITHMS; COMPUTER SIMULATION; GATES (TRANSISTOR); MONTE CARLO METHODS; OPTIMIZATION; SERVICE LIFE; STRESS ANALYSIS; WEIBULL DISTRIBUTION;

GATE OXIDE WEAROUT;

SEMICONDUCTOR DEVICE TESTING;

EID: 0034427478     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)