Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 60-72

  Wu, E ^a   Lai, W ^a   Khare, M ^a   Sune J ^a   Han, L K ^a   McKenna, J ^a   Bolam, R ^a   Harmon, D ^a   Strong, A ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; THERMAL EFFECTS; THICKNESS MEASUREMENT; THIN FILMS;

ULTRA-THIN GATE OXIDES;

FIELD EFFECT TRANSISTORS;

EID: 0036084678     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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