Barrier heights of GaN Schottky contacts

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 388-393

  Kampen, Thorsten U ^a   Mönch, Winfried ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

Charge neutrality level; GaN Schottky contacts; MIGS

Indexed keywords

CHARGE TRANSFER; CRYSTAL ORIENTATION; CURRENT VOLTAGE CHARACTERISTICS; LEAD; OHMIC CONTACTS; PERMITTIVITY; SEMICONDUCTING GALLIUM COMPOUNDS; SILVER;

CHARGE NEUTRALITY LEVEL; METAL INDUCED GAP STATES (MIGS); SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 0031548617     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80112-2     Document Type: Article

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