In situ control of GaN growth by molecular beam epitaxy

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 272-280

  Held, R ^a,b   Crawford, D E ^a   Johnston, A M ^a   Dabiran, A M ^a   Cohen, P I ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

^b University of Minnesota   (United States)

Author keywords

Atomic force microscopy (AFM); GaN; Molecular beam epitaxy (MBE); Reflection high energy electron diffraction (RHEED)

Indexed keywords

EID: 0000497276     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0163-z     Document Type: Article

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