UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 455-460

  Benjamin, M C ^a   Bremser, M D ^a   Weeks Jr , T W ^a   King, S W ^a   Davis, R F ^a   Nemanich, R J ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; GALLIUM COMPOUNDS; INTERFACES (MATERIALS); NITROGEN COMPOUNDS; PHOTOEMISSION; SILICON CARBIDE; SURFACE PROPERTIES;

ALUMINUM COMPOUNDS;

EID: 18244420078     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00186-9     Document Type: Article

References (12)

1. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10 (1992) 1237.
2. J.H. Edgar, J. Mater. Res. 7 (1992) 235.
3. M.D. Williams, M.D. Feuer, S.C. Shunk, N.J. Sauer and T.Y. Chang, J. Appl. Phys. 71 (1992) 3042.
4. M.C. Benjamin, C. Wang, R.F. Davis and R.J. Nemanich, Appl. Phys. Lett, 64 (1994).
5. M.C. Benjamin, C. Wang, R.S. Kern, R.F. Davis and R.J. Nemanich, Mater. Res. Soc. Symp. 339 (1994) 81.
6. F.J. Himpsel, J.A. Knapp, J.A. van Vechten and D.E. Eastman, Phys. Rev. B 20 (1979) 624.
7. B.B. Pate, Surf. Sci. 165 (1986) 83.
8. B.B. Pate, M.H. Hecht, C. Binns, I. Lindau and W.E. Spicer, J. Vac. Sci. Technol. 21 (1982) 364.
9. J. van der Weide and R.J. Nemanich, J. Vac. Sci. Technol. B 10 (1992) 1940.
10. J. van der Weide and R.J. Nemanich, Appl. Phys. Lett. 62 (1993) 1878.
11. J. van der Weide and R.J. Nemanich, Phys. Rev. B 15 (1994) 49, 13629.
12. R. Kaplan, Surf. Sci. 215 (1989) 111.