UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 455-460

  Benjamin, M C ^a   Bremser, M D ^a   Weeks Jr , T W ^a   King, S W ^a   Davis, R F ^a   Nemanich, R J ^a  

^a Campus Box 7908   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FILM GROWTH; GALLIUM COMPOUNDS; INTERFACES (MATERIALS); NITROGEN COMPOUNDS; PHOTOEMISSION; SILICON CARBIDE; SURFACE PROPERTIES;

ALUMINUM COMPOUNDS;

EID: 18244420078     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00186-9     Document Type: Article

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