MBE growth and properties of GaN and AlxGa1-xN on GaN/SiC substrates

Journal of Electronic Materials

Volumn 25, Issue 5, 1996, Pages 793-797

  Johnson, M A L ^a   Fujita, Shizuo ^a,c   Rowland Jr , W H ^a   Hughes, W C ^a   He, Y W ^a   El Masry, N A ^a   Cook Jr , J W ^a   Schetzina, J F ^a   Ren, J ^b   Edmond, J A ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

^c KYOTO UNIVERSITY   (Japan)

Author keywords

AlxGa1 xN; GaN; GaN SiC substrates; Molecular beam epitaxy; Transmission electron microscopy

Indexed keywords

EID: 0347221720     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02666638     Document Type: Article

References (17)

1. M.A. Khan, J.N. Kuznia, A.R. Bhattarai and D.T. Olson, Appl. Phys. Lett. 62, 1786 (1993).
2. M.A. Khan, A.R. Bhattarai, J.N. Kuznia and D.T. Olson, Appl. Phys. Lett. 63, 1241 (1993).
3. M.A. Khan, 1993 ONR/SDIO UV Materials Review, Washington, DC (1993).
4. S. Nakamura, T. Mukai and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
5. R.J. Molnar, R. Singh and T.D. Moustakas, Appl. Phys. Lett. 66, 268 (1995).
6. T.D. Moustakas and R.J. Molnar, Mater. Res. Soc. Symp. Proc. 281, 753 (1993).
7. C. Wang and R.F. Davis, Appl. Phys. Lett. 63, 990 (1993).
8. M.E. Lin, G. Zue, G.L. Zhou, J.E. Green and H. Morkoç, Appl. Phys. Lett. 63, 932 (1993).
9. J.M. Zavada, R.G. Wilson, C.R. Abernathy and S.J. Pearton, Appl. Phys. Lett. 64, 2724 (1994).
10. M.E. Lin, S. Strite, A. Agarwal, A. Salvador, G.L. Zhou, N. Teraguchi, A. Rockett and H. Morkoç, Appl. Phys. Lett. 62, 702 (1993)
11. M.E. Lin, B.N. Sverdlov and H. Morkoç, Appl. Phys. Lett. 63, 3625 (1993).
12. M.E. Lin, B. Sverdlov, G.L. Zhou and H. Morkoç, Appl. Phys. Lett. 62, 3479 (1993).
13. An exception to this point is the work of R.J. Molnar and T.D. Moustakas who modified a commercial MBE system for both optical emission spectroscopy and Langmuire probe studies of nitrogen plasmas generated by an ECR plasma source. See R.J. Molnar and T.D. Moustakas, J. Appl. Phys. 76, 4587 (1994).
14. W.C. Hughes, W.H. Rowland, Jr., M.A.L. Johnson, Shizuo Fujita, J.W. Cook, Jr., J.F. Schetzina, J. Renand J.A. Edmond, Proc. 1995 Phys. and Chem. of Semiconductor Interfaces (PCSI) Conf., Phoenix, AZ, 1995. To be published in J. Vac. Sci. Technol. (1995).
15. R. Dingle, D.D. Sell, S.E. Stokowski and M. Ilegems, Phys. Rev. B 4, 1211 (1971).
16. N.V. Edwards, T.W. Weeks, Jr., M.D. Bremser, R.F. Davis and D.E. Aspnes, to be published.
17. S. Krishnankutty, R.M. Kolbas, M.A. Khan, J.N. Kuznia, J.M. Van Hove and D.T. Olson, J. Electron. Mater. 21, 609 (1992).