High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2×2) and (4×4) reflection high energy electron diffraction patterns

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 3 A, 1996, Pages

  Iwata, Kakuya ^a   Asahi, Hajime ^a   Yu, Soon Jae ^b   Asami, Kumiko ^a   Fujita, Hideki ^c   Fushida, Masahiro ^a   Gonda, Shun Ichi ^a  

^a OSAKA UNIVERSITY   (Japan)

^b SunMoon University   (South Korea)

^c NISSIN ELECTRIC CO LTD   (Japan)

Author keywords

ECR MBE; GaN; Ion removal magnet; Photoluminescence; RHEED; Surface reconstruction; X ray diffraction

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; SEMICONDUCTING FILMS; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS;

ELECTRON CYCLOTRON RESONANCE PLASMA CELLS; GALLIUM NITRIDE; ION REMOVAL MAGNETS; SURFACE RECONSTRUCTION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030105080     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l289     Document Type: Article

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