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Volumn 395, Issue , 1996, Pages 723-732
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Hydrogen in GaN
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
BINDING ENERGY;
CRYSTAL DEFECTS;
DIFFUSION;
DISSOCIATION;
HYDROGEN;
HYDROGENATION;
MAGNESIUM;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PASSIVATION;
SEMICONDUCTOR DOPING;
DOPING EFFICIENCY;
HOLE CONCENTRATION;
HOLE MOBILITY;
THERMAL DISSOCIATION ENERGIES;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0029748162
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (15)
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References (24)
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