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Volumn 56, Issue 16, 1997, Pages 10271-10275

Surface and bulk electronic structure of thin-film wurtzite GaN

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000688384     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.10271     Document Type: Article
Times cited : (108)

References (20)
  • 2
    • 0039098842 scopus 로고
    • Wide Band-Gap Semiconductors, edited by T. D. Moustakas, J. I. Pankove, and Y. Hamakawa, MRS Symposia Proceedings No. 242 (Materials Research Society, Pittsburgh, 1992).
    • (1992) Wide Band-Gap Semiconductors
  • 3
    • 0342378848 scopus 로고
    • Materials Research Society, Pittsburgh
    • Diamond, SiC and Nitride Wide Bandgap Semiconductors, edited by C. H. Carter, Jr., G. Gildenblat, S. Nakamura, and R. J. Nemanich, MRS Symposia Proceedings No. 339 (Materials Research Society, Pittsburgh, 1994).
    • (1994) Diamond, SiC and Nitride Wide Bandgap Semiconductors Phys. Rev. B
  • 9
    • 0542435907 scopus 로고    scopus 로고
    • M. Misra et. al in III-V Nitrides, edited by F. A. Ponce, T. D. Moustakas, I. Akasaki, and B. A. Monema (Materials Research Society, Pittsburgh, 1996), Vol. 449, p. 597.
    • (1996) III-V Nitrides , vol.449 , pp. 597
    • Misra, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.