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Volumn 43, Issue 1-3, 1997, Pages 250-252

Relaxation of thermal strain in GaN epitaxial layers grown on sapphire

Author keywords

Cathodoluminescence; Photoluminescence; X ray diffraction

Indexed keywords

CATHODOLUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; NUCLEATION; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; STRAIN; THERMAL STRESS; X RAY CRYSTALLOGRAPHY;

EID: 0040581853     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01877-6     Document Type: Article
Times cited : (13)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.