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Volumn 43, Issue 1-3, 1997, Pages 250-252
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Relaxation of thermal strain in GaN epitaxial layers grown on sapphire
a a a a a |
Author keywords
Cathodoluminescence; Photoluminescence; X ray diffraction
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Indexed keywords
CATHODOLUMINESCENCE;
METALLORGANIC VAPOR PHASE EPITAXY;
NITRIDES;
NUCLEATION;
PHOTOLUMINESCENCE;
RELAXATION PROCESSES;
SAPPHIRE;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
STRAIN;
THERMAL STRESS;
X RAY CRYSTALLOGRAPHY;
ALUMINUM NITRIDE;
CATHODOLUMINESCENCE SPECTROSCOPY;
ENERGY SHIFTS;
GALLIUM NITRIDE;
THERMAL STRAIN;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0040581853
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(96)01877-6 Document Type: Article |
Times cited : (13)
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References (11)
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