The key role of polarity in the growth process of (0001) nitrides

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 157-160

  Daudin, B ^a   Rouviere J L ^a   Arlery, M ^a  

^a CEA GRENOBLE   (France)

Author keywords

Convergent beam electron diffraction; Inversion domain boundaries; Polarity

Indexed keywords

ALUMINA; CRYSTAL DEFECTS; ELECTRON BEAMS; ELECTRON DIFFRACTION; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; NITRIDING; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR INSULATOR BOUNDARIES; SURFACE ROUGHNESS;

CONVERGENT BEAM ELECTRON DIFFRACTION (CBED); INVERSE DOMAIN BOUNDARIES; ION CHANNELING; POLARITY; WURTZITE GALLIUM NITRIDES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0000648736     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01854-5     Document Type: Article

References (6)

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2. See for instance J.C.H. Spence and J.M. Zuo, Electron Microdiffraction, Plenum, New York, 1992.
3. J.L. Rouvière, M. Arlery, A. Bourret, R. Niebuhr and K.H. Bachem, MRS meeting, Boston, November 1995.
4. R. Niebuhr, K. Bachem, K. Dombrowski, M. Maier, W. Pletschen and U. Kaufmann, submitted to J. Electron. Mater.
5. P.A. Stadelmann, Ultramicroscopy, 21 (1987) 131.
6. B. Daudin, J.L. Rouvière, E. Ligeon, M. Arlery, R. Niebuhr and K.H. Bachem, Proc. Int. Symp. on Blue Lasers and Light Emitting Diodes, Chiba, March 1996.