Materials, Devices, and Circuits of Transparent Amorphous-Oxide Semiconductor

IEEE/OSA Journal of Display Technology

Volumn 5, Issue 12, 2009, Pages 531-540

  Kumomi, Hideya ^a   Yaginuma, Seiichiro ^a   Omura, Hideyuki ^a   Goyal, Amita ^a   Sato, Ayumu ^a   Watanabe, Masaya ^a   Shimada, Mikio ^a   Kaji, Nobuyuki ^a   Takahashi, Kenji ^a   Ofuji, Masato ^a   Watanabe, Tomohiro ^a   Itagaki, Naho ^a   Shimizu, Hisae ^a   Abe, Katsumi ^a   Tateishi, Yoshinori ^a   Yabuta, Hisato ^a   Iwasaki, Tatsuya ^a   Hayashi, Ryo ^a   Aiba, Toshiaki ^a   Sano, Masafumi ^a  

^a CANON INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85008054158     PISSN: 1551319X     EISSN: 15589323     Source Type: Journal    
DOI: 10.1109/JDT.2009.2025521     Document Type: Article

References (77)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature, vol. 432, pp. 488–492, 2004.
2. H. Hosono, M. Yasukawa, and H. Kawazoe, “Novel oxide amorphous semiconductors: Transparent conducting amorphous oxides,” J. Non- Cryst. Solids, vol. 203, pp. 334–344, 1996.
3. K. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, “Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations,” Phys. Rev. B, vol. 75, no. 3, p. 035212, 2007.
4. H.-H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, and C.-C.Wu, “Modeling of amorphous InGaZnO thin film transistors and their subgap density of states,” Appl. Phys. Lett., vol. 92, no. 13, p. 133503, 2008.
5. M. Kimura, T. Nakanishi, K. Nomura, T. Kamiya, and H. Hosono, “Trap densities in amorphous-InGaZnO thin-film transistors,” Appl. Phys. Lett., vol. 92, 13, p. 133512, 2008.
6. K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, K. Kobayashi, M. Hirano, and H. Hosono, “Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive x-ray photoelectron spectroscopy,” Appl. Phys. Lett., vol. 92, 20, p. 202117, 2008.
7. K. Jeon, C. Kim, I. Song, J. Park, S. Kim, S. Kim, Y. Park, J.-H. Park, S. Lee, D. M. Kim, and D. H. Kim, “Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics,” Appl. Phys. Lett., vol. 93, no. 18, p. 182102, 2008.
8. J.-H. Park, K. Jeon, S. Lee, S. Kim, S. Kim, I. Song, C. J. Kim, J. Park, Y. Park, D. M. Kim, and D. H. Kim, “Extraction of density of states in amorphous GaInZnO thin-film transistors by combining an optical charge pumping and capacitance-voltage characteristics,” IEEE Electron Device Lett., vol. 29, no. 12, pp. 1292–1295, Dec. 2008.
9. C. Chen, K. Abe, H. Kumomi, and J. Kanicki, “Density of states of a-InGaZnO from temperature-dependent field-effect studies,” IEEE Trans. Electron Devices, vol. 56, no. 6, pp. 1177–1183, Jun. 2009.
10. 2-ZnO thin-film transistors,” Jpn. J. Apl. Phys., vol. 48, no. 4, p. 04C091, 2009.
11. T. Kawamura, H. Uchiyama, S. Saito, H.Wakana, T. Mine, M. Hatano, K. Torii, and T. Onai, “1.5-V operating fully-depleted amorphous oxide thin film transistors achieved by 63-mV/dec subthreshold slope,” in Tech. Dig., 2008 IEEE Int. Electron Device Meeting, 2008, pp. 1–4.
12. C. J. Kim, D. Kang, I. Song, J. C. Park, H. Lim, S. Kim, E. Lee, R. Chung, J. C. Lee, and Y. Park, “Highly stable Ga2O3-In2O3 -ZnO TFT for active-matrix organic light-emitting diode display application,” in Tech. Dig., 2006 IEEE Int. Electron Device Meeting, 2006, pp. 1–4.
13. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “High-mobility thin-film transistor with amorphous InGaZnO channel fabricated by room temperature rf-magnetron sputtering,” Appl. Phys. Lett., vol. 89, no. 11, p. 112123, 2006.
14. H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Amorphous oxide channel TFTs,” Thin Solid Films, vol. 516, no. 7, pp. 1516–1522, 2008.
15. J. Y. Kwon, K. S. Son, J. S. Jung, T. S. Kim, M. K. Ryu, K. B. Park, J. W. Kim, Y. G. Lee, C. J. Kim, S. I. Kim, Y. S. Park, S. Y. Lee, and J. M. Kim, “4 inch QVGA AMOLED display driven by GaInZnO TFT,” in Proc. IDW2007, Tokyo, Japan, 2007, vol. AMD9–3, pp. 1783–1786.
16. M. Ito, M. Kon, M. Ishizaki, and N. Sekine, “A flexible active-matrix TFT array with amorphous oxide semiconductors for electronic paper,” in Proc. IDW/AD 2005, Tokyo, 2005, vol. EP2–4L, pp. 845–846.
17. E. Fortunato, N. Correia, P. Barquinha, L. Pereira, G. Gonçalves, and R. Martins, “High-performance flexible hybrid field-effect transistors based on cellulose fiber paper,” IEEE Electron Device Lett., vol. 29, no. 9, pp. 988–990, Sep. 2008.
18. W. Lim, E. A. Douglas, S.-H. Kim, D. P. Norton, S. J. Pearton, F. Ren, H. Shen, and W. H. Chang, “High mobility InGaZnO thin-film transistors on paper,” Appl. Phys. Lett., vol. 94, no. 7, p. 072103, 2009.
19. H.-N. Lee, J. Kyung, M.-C. Sung, D. Y. Kim, S. K. Kang, S.-J. Kim, C. N. Kim, H.-G. Kim, and S.-T. Kim, “Oxide TFT with multilayer gate insulator for backplane of AMOLED device,” J. Soc. Inf. Display, vol. 16, no. 2, pp. 265–272, 2008.
20. M. Ito, M. Kon, C. Miyazaki, N. Ikeda, M. Iishizaki, Y. Ugajin, and N. Sekine, ““Front drive” display structure for color electronic paper using fully transparent amorphous oxide TFT array,” IEICE Trans. Electron., vol. E90-C, no. 11, pp. 2105–2111, 2007.
21. M. Ito, M. Kon, C. Miyazaki, N. Ikeda, M. Iishizaki, R. Matsubara, Y. Ugajin, and N. Sekine, “Amorphous oxide TFT and their applications in electrophoretic displays,” Phys. Stat. Sol. (a), vol. 205, no. 8, pp. 1885–1894, 2008.
22. M. Ito, C. Miyazaki, M. Ishizaki, M. Kon, N. Ikeda, T. Okubo, R. Matsubara, K. Hatta, Y. Ugajin, and N. Sekine, “Application of amorphous oxide TFT to electrophoretic display,” J. Non-Cryst. Solids, vol. 354, no. 19–25, pp. 2777–2782, 2008.
23. R. Hayashi, M. Ofuji, N. Kaji, K. Takahashi, K. Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Circuits using uniform TFTs based on amorphous In-Ga-Zn-O,” J. Soc. Inf. Display, vol. 15, no. 11, pp. 915–921, 2007.
24. J. K. Jeong, J. H. Jeong, H. W. Yang, T. K. Ahn, M. Kim, K. S. Kim, B. S. Gu, H.-J. Chung, J.-S. Park, Y.-G. Mo, H. D. Kim, and H. K. Chung, “12.1-in.WXGAAMOLED display driven by InGaZnO thin-film transistors,” J. Soc. Inf. Display, vol. 17, no. 2, pp. 95–100, 2009.
25. A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO,” Thin Solid Films, vol. 486, no. 1–2, pp. 38–41, 2005.
26. M. Fujii, H. Yano, T. Hatayama, Y. Uraoka, T. Fuyuki, J. S. Jung, and J. Y. Kwon, “Thermal analysis of degradation in Ga2O3 –In2O3-ZnO thin-film transistors,” Jpn. J. Apl. Phys., vol. 47, no. 8, pp. 6236–6240, 2008.
27. I. Song, S. Kim, H. Yin, C. J. Kim, J. Park, S. Kim, H. S. Choi, E. Lee, and Y. Park, “Short channel characteristics of gallium-indium-zincoxide thin film transistors for three-dimensional stacking memory,” IEEE Electron Device Lett., vol. 29, no. 6, pp. 549–552, Jun. 2008.
28. H. Yin, S. Kim, C. J. Kim, I. Song, J. Park, S. Kim, and Y. Park, “Fully transparent nonvolatile memory employing amorphous oxides as charge trap and transistor's channel layer,” Appl. Phys. Lett., vol. 93, no. 17, p. 172109, 2008.
29. H. Yin, S. Kim, H. Lim, Y. Min, C. J. Kim, I. Song, J. Park, S.-W. Kim, A. Tikhonovsky, J. Hyun, and Y. Park, “Program/erase characteristics of amorphous gallium indium zinc oxide nonvolatile memory,” IEEE Trans. Electron Devices, vol. 55, no. 8, pp. 2071–2077, Aug. 2008.
30. M.-J. Lee, C. B. Lee, S. Kim, H. Yin, J. Park, S. E. Ahn, B. S. Kang, K. H. Kim, G. Stefanovich, I. Song, S.-W. Kim, J. H. Lee, S. J. Chung, Y. H. Kim, C. S. Lee, J. B. Park, I. G. Baek, C. J. Kim, and Y. Park, “Stack friendly all-oxide 3D RRAM using GaInZnO peripheral TFT realized over glass substrates,” in Tech. Dig., 2008 IEEE Int. Electron Device Meeting, 2008, pp. 1–4.
31. M.-C. Sung, H.-N. Lee, C. N. Kim, S. K. Kang, D. Y. Kim, S.-J. Kim, S. K. Kim, S.-K. Kim, H.-G. Kim, and S.-T. Kim, “Novel backplane for AM-OLED device,” in Dig. Tech. Papers, 7th Int. Meeting Inf. Display, 2007, vol. 9–1, pp. 133–136.
32. J. Y. Kwon, K. S. Son, J. S. Jung, T. S. Kim, M. K. Ryu, K. B. Park, B. W. Yoo, J. W. Kim, Y. G. Lee, K. C. Park, S. Y. Lee, and J. M. Kim, “Bottom-gate gallium indium zinc oxide thin-film transistor array for high-resolution AMOLED display,” IEEE Electron Device Lett., vol. 29, no. 12, pp. 1309–1311, Dec. 2008.
33. J.-H. Lee, D.-H. Kim, D.-J. Yang, S.-Y. Hong, K.-S. Yoon, P.-S. Hong, C.-O. Jeong, H.-S. Park, S. Y. Kim, S. K. Lim, and S. S. Kim, “World's largest (15-inch) XGA AMLCD panel using IGZO oxide TFT,” in Dig. Tech. Papers, SID Int. Symp., 2008, vol. 39, no. 42.2, pp. 625–628.
34. H. Hosono, “Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application,” J. Non-Cryst. Solids, vol. 352, no. 9–20, pp. 851–858, 2006.
35. T. Iwasaki, N. Itagaki, T. Den, H.Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system,” Appl. Phys. Lett., vol. 90, no. 24, p. 242114, 2007.
36. N. L. Dehuff, E. S. Kettenring, D. Hong, H. Q. Chiang, J. F. Wager, R. L. Hoffman, C.-H. Park, and D. A. Keszler, “Transparent thin-film transistors with zinc indium oxide channel layer,” J. Appl. Phys., vol. 97, no. 6, p. 064505, 2005.
37. P. Barquinha, A. Pimentel, A. Marques, L. Pereira, R. Martins, and E. Fortunato, “Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide,” J. Non- Cryst. Solids, vol. 352, no. 9–20, pp. 1749–1752, 2006.
38. P. Barquinha, A. Pimentel, A. Marques, L. Pereira, R. Martins, and E. Fortunato, “Effect of UV and visible light radiation on the electrical performances of transparent TFTs based on amorphous indium zinc oxide,” J. Non-Cryst. Solids, pp. 1756–1760, 2006.
39. D. C. Paine, B. Yaglioglu, Z. Beiley, and S. Lee, “Amorphous IZObased transparent thin film transistors,” Thin Solid Films, vol. 516, no. 17, pp. 5894–5898, 2008.
40. N. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, T. Kamiya, and H. Hosono, “Zn-In-O based thin-film transistors: Compositional dependence,” Phys. Stat. Sol. (a), vol. 205, no. 8, pp. 1915–1919, 2008.
41. J. E. Medvedeva, “Averaging of the electron effective mass in multicomponent transparent conducting oxides,” Euro. Phys. Lett., vol. 78, no. 5, pp. 57004–57009, 2007.
42. D.-H. Cho, S. Yang, C. Byun, M.K. Ryu, S.-H.K. Park, C.-S. Hwang, S.M. Yoon, and H.-Y. Chu, “Transparent oxide thin-film transistors composed of Al and Sn-doped zinc indium oxide,” IEEE Electron Device Lett., vol. 30, no. 1, pp. 48–50, Jan. 2009.
43. H. Q. Chiang, J. F.Wager, R. L. Hoffman, J. Jeong, and D. A. Keszler, “High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer,” Appl. Phys. Lett., vol. 86, no. 1, p. 013503, 2005.
44. W. B. Jackson, R. L. Hoffman, and G. S. Herman, “High-performance flexible zinc tin oxide field-effect transistors,” Appl. Phys. Lett., vol. 87, no. 19, p. 193503, 2005.
45. P. Görrn, M. Sander, J. Meyer, M. Kröger, E. Becker, H.-H. Johannes, W. Kowalsky, and T. Riedl, “Towards see-through displays: Fully transparent thin-film transistors driving transparent organic light-emitting diodes,” Adv. Mater., vol. 18, no. 6, pp. 738–741, 2006.
46. P. Görrn, P. Hölzer, T. Riedl, W. Kowalsky, J. Wang, T. Weimann, P. Hinze, and S. Kipp, “Stability of transparent zinc tin oxide transistors under bias stress,” Appl. Phys. Lett., vol. 90, no. 6, p. 063502, 2007.
47. P. Görrn, M. Lehnhardt, T. Riedl, and W. Kowalsky, “The influence of visible light on transparent zinc tin oxide thin film transistors,” Appl. Phys. Lett., vol. 91, no. 19, p. 193504, 2007.
48. T. Riedl, P. Görrn, P. Hölzer, and W. Kowalsky, “Ultra-high long-term stability of oxide-TTFTs under current stress,” Phys. Stat. Sol. (RRL), vol. 1, no. 5, pp. 175–177, 2007.
49. P. Görrn, F. Ghaffari, T. Riedl, and W. Kowalsky, “Zinc tin oxide based driver for highly transparent active matrix OLED displays,” Solid-State Electron., vol. 53, no. 3, pp. 329–331, 2009.
50. E. M. C. Fortunato, L. M. N. Pereira, P. M. C. Barquinha, A. M. Botelho do Rego, G. Gonçalves, A. Vilà, J. R. Morante, and R. F. P. Martins, “High mobility indium free amorphous oxide thin film transistors,” Appl. Phys. Lett., vol. 92, no. 22, p. 222103, 2008.
51. J. C. Lee, J.Won, Y. Chung, H. Lee, E. Lee, D. Kang, C. Kim, J. Choi, and J. Kim, “Investigations of semiconductor devices using SIMS; diffusion, contamination, process control,” Appl. Surf. Sci., vol. 255, no. 4, pp. 1395–1399, 2008.
52. Y.-K. Moon, S. Lee, D.-H. Kim, D.-H. Lee, C.-O. Jeong, and J.-W. Park, “Application of DC magnetron sputtering to deposition of InGaZnO films for thin film transistor devices,” Jpn. J. Apl. Phys., vol. 48, p. 031301, 2009.
53. J. P. Perdew, K. Burke, and M. Ernzerhof, “Generalized gradient approximation made simple,” Phys. Rev. Lett., vol. 77, no. 18, pp. 3865–3868, 1996.
54. G. Kresse and J. Hafner, “Ab initio molecular dynamics for liquid metals,” Phys. Rev. B, vol. 47, no. 1, pp. 558–561, 1993.
55. G. Kresse and J. Hafner, “Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium,” Phys. Rev. B, vol. 49, no. 20, pp. 14251–14269, 1994.
56. H. Omura, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “First-principles study of native point defects in crystalline indium gallium zinc oxide,” J. Appl. Phys., vol. 105, no. 9, p. 093712, 2009.
57. D. M. Hofmann, A. Hofstaetter, F. Leiter, H. Zhou, F. Henecker, B. K. Meyer, S. B. Orlinskii, J. Schmidt, and P. G. Baranov, “Hydrogen: A relevant shallow donor in zinc oxide,” Phys. Rev. Lett., vol. 88, no. 4, p. 045504, 2002.
58. J. Robertson and P. W. Peacock, “Doping and hydrogen in wide gap oxides,” Thin Sold Films, vol. 445, no. 2, pp. 155–160, 2003.
59. G. A. Shi, M. Stavola, S. J. Pearton, M. Thieme, E. V. Lavrov, and J. Weber, “Hydrogen local modes and shallow donors in ZnO,” Phys. Rev. B, vol. 72, no. 19, p. 195211, 2005.
60. B. D. Ahn, H. S. Shin, H. J. Kim, J.-S. Park, and J. K. Jeong, “Comparison of the effects of Ar and H plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors,” Appl. Phys. Lett., vol. 93, no. 20, p. 203506, 2008.
61. B. D. Ahn, H. S. Shin, G. H. Kim, J.-S. Park, and H. J. Kim, “A novel amorphous InGaZnO thin film transistor structure without source/drain layer deposition,” Jpn. J. Appl. Phys., vol. 48, no. 3, p. 03B019, 2009.
62. S. Kim, J. Park, C. Kim, I. Song, S. Kim, S. Park, H. Yin, H.-I. Lee, E. Lee, and Y. Park, “Source/drain formation of self-aligned top-gate amorphous GaInZnO thin-film transistors by NH plasma treatment,” IEEE Electron Device Lett., vol. 30, no. 4, pp. 374–376, Apr. 2009.
63. A. Sato, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Amorphous In-Ga-Zn-O thin-film transistor with coplanar homojunction structure,” Thin Solid Films, to be published.
64. S. Lany and A. Zunger, “Dopability, intrinsic conductivity, and nonstoichiometry of transparent conducting oxides,” Phys. Rev. Lett., vol. 98, no. 4, p. 045501, 2007.
65. J. Park, S. Kim, C. Kim, S. Kim, I. Song, H. Yin, K.-K. Kim, S. Lee, K. Hong, J. Lee, J. Jung, E. Lee, K.-W. Kwon, and Y. Park, “High-performance amorphous gallium indium zinc oxide thin-film transistors through N O plasma passivation,” Appl. Phys. Lett., vol. 93, no. 5, p. 053505, 2008.
66. C.-J. Kim, J. Park, S. Kim, I. Song, S. Kim, Y. Park, E. Lee, B. Anass, and J.-S. Park, “Characteristics and cleaning of dry-etching-damaged layer of amorphous oxide thin-film transistor,” Electrochem. Solid-State Lett., vol. 12, no. 4, pp. H95–H97, 2009.
67. H. Lim, H. Yin, J.-S. Park, I. Song, C. Kim, J. Park, S. Kim, S.-W. Kim, C. B. Lee, Y. C. Kim, Y. S. Park, and D. Kang, “Double gate GaInZnO thin film transistors,” Appl. Phys. Lett., vol. 93, no. 6, p. 063505, 2008.
68. Y. Shimura, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, “Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes,” Thin Solid Films, vol. 516, no. 17, pp. 5899–5902, 2008.
69. J.-S. Park, J. K. Jeong, Y.-G. Mo, and H. D. Kim, “Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment,” Appl. Phys. Lett., vol. 90, no. 26, p. 262106, 2007.
70. R. Hayashi, A. Sato, M. Ofuji, K. Abe, H. Yabuta, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Improved amorphous In-Ga-Zn-O TFTs,” in Dig. Tech. Papers, SID Int. Symp., 2008, vol. 39, no. 42.1, pp. 621–624.
71. A. Sato, K. Abe, R. Hayashi, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor,” Appl. Phys. Lett., vol. 94, no. 13, p. 133502, 2009.
72. J. Park, I. Song, S. Kim, S. Kim, C. Kim, J. Lee, H. Lee, E. Lee, H. Yin, K.-K. Kim, K.-W. Kwon, and Y. Park, “Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors,” Appl. Phys. Lett., vol. 93, no. 5, p. 053501, 2008.
73. J. H. Na, M. Kitamura, and Y. Arakawa, “High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes,” Appl. Phys. Lett., vol. 93, no. 6, p. 063501, 2008.
74. −1 for a Temperature range of 393–673 K, which is about one thousandth smaller than in crystalline ZnO,”, unpublished.
75. M. Ofuji, K. Abe, H. Shimizu, N. Kaji, R. Hayashi, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono, “Fast thin-film transistor circuits based on amorphous oxide semiconductor,” IEEE Electron Device Lett., vol. 28, no. 4, pp. 273–275, Apr. 2007.
76. C. Chen, K. Abe, T.-C. Fung, H.Kumomi, and J. Kanicki, “Amorphous In-Ga-Zn-O thin film transistor current-scaling pixel electrode circuit for active-matrix organic light-emitting displays,” Jpn. J. Appl. Phys., vol. 48, no. 3, p. 03B025, 2009.
77. D. P. Gosain and T. Tanaka, “Instability of amorphous indium gallium zinc oxide thin film transistors under light illumination,” Jpn. J. Appl. Phys., vol. 48, no. 3, p. 03B018, 2009.