Short channel characteristics of gallium-indium-zinc-oxide thin film transistors for three-dimensional stacking memory

IEEE Electron Device Letters

Volumn 29, Issue 6, 2008, Pages 549-552

  Song, Ihun ^a   Kim, Sunil ^a   Yin, Huaxiang ^a   Kim, Chang Jung ^a   Park, Jaechul ^a   Kim, Sangwook ^a   Choi, Hyuk Soon ^a   Lee, Eunha ^a   Park, Youngsoo ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Gallium Indium Zinc Oxide (GIZO); Thin film transistor (TFT); Three dimensional (3 D) stacking memory

Indexed keywords

ELECTRON MOBILITY; LITHOGRAPHY; SEMICONDUCTING GALLIUM COMPOUNDS; THRESHOLD VOLTAGE;

GALLIUM-INDIUM-ZINC-OXIDE (GIZO); THREE-DIMENSIONAL (3-D) STACKING MEMORY;

THIN FILM TRANSISTORS;

EID: 44849089572     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.920965     Document Type: Article

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