Modeling of amorphous InGaZnO thin-film transistors based on the density of states extracted from the optical response of capacitance-voltage characteristics

Applied Physics Letters

Volumn 93, Issue 18, 2008, Pages

  Jeon, Kichan ^a   Kim, Changjung ^b   Song, Ihun ^b   Park, Jaechul ^b   Kim, Sunil ^b   Kim, Sangwook ^b   Park, Youngsoo ^b   Park, Jun Hyun ^a   Lee, Sangwon ^a   Kim, Dong Myong ^a   Kim, Dae Hwan ^a  

^a Kookmin University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER AIDED DESIGN; DRAIN CURRENT; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

CAPACITANCE VOLTAGES; COMPUTER-AIDED DESIGNS; DC CHARACTERISTICS; DENSITY OF STATES; DRAIN VOLTAGES; EXPONENTIAL FUNCTIONS; GATE VOLTAGES; LINEAR SUPERPOSITIONS; MEASURED DATUMS; OPTICAL RESPONSES; VOLTAGE CHARACTERISTICS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 55849138008     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3013842     Document Type: Article

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