High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Chiang, H Q ^a   Wager, J F ^a   Hoffman, R L ^b   Jeong, J ^c   Keszler, D A ^c  

^a Oregon State University   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

^c OREGON STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY OXIDES; HEAVY-METAL CATIONS; INDIUM OXIDE DOPED WITH TIN (ITO); WIDE BAND GAP;

AMORPHOUS MATERIALS; ELECTRONIC EQUIPMENT; ETCHING; FABRICATION; OPACITY; OXIDATION; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

THIN FILM TRANSISTORS;

EID: 13544269370     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1843286     Document Type: Article

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