Double gate GaInZnO thin film transistors

Applied Physics Letters

Volumn 93, Issue 6, 2008, Pages

  Lim, Hyuck ^a   Yin, Huaxiang ^b   Park, Jin Seong ^c   Song, Ihun ^b   Kim, Changjung ^b   Park, Jaechul ^b   Kim, Sunil ^b   Kim, Sang Wook ^b   Lee, Chang Bum ^b   Kim, Yong C ^b   Park, Young Soo ^b   Kang, Donghun ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Samsung SDI   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GALERKIN METHODS; GALLIUM; INDIUM; OPTICAL DESIGN; OXIDES; THICK FILMS; THIN FILM DEVICES; THIN FILMS; TRANSISTORS; ZINC; ZINC OXIDE;

BACK GATES; DEVICE PERFORMANCES; DOUBLE GATES; INDIUM ZINC OXIDES;

THIN FILM TRANSISTORS;

EID: 49749095157     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2967456     Document Type: Article

References (9)

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