Characteristics and cleaning of dry-etching-damaged layer of amorphous oxide thin-film transistor

Electrochemical and Solid-State Letters

Volumn 12, Issue 4, 2009, Pages

  Kim, Chang Jung ^a   Park, Jaechul ^a   Kim, Sunil ^a   Song, Ihun ^a   Kim, Sangwook ^a   Park, Youngsoo ^a   Lee, Eunha ^a   Anass, Benayad ^a   Park, Jin Seong ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Samsung SDI   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTRON SPECTROSCOPY; ETCHING; GALLIUM; METAL RECOVERY; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PLASMA ETCHING; SELF ASSEMBLED MONOLAYERS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

AMORPHOUS OXIDES; AUGER ELECTRONS; CHANNEL LAYERS; CHEMICAL BONDING ENERGIES; CHEMICAL BONDING STRUCTURES; CLEANING TREATMENTS; CROSS STRUCTURES; DEPOSITED LAYERS; DRY-ETCH; DRY-ETCHING; ELECTRICAL PERFORMANCE; LAYER COMPOSITIONS; METAL CATIONS; OFF CURRENTS; OXYGEN DEFICIENTS; SUB-THRESHOLD SWINGS; TRANSMISSION ELECTRONS; X-RAY PHOTOELECTRON SPECTROSCOPIES; ZNO;

AUGER ELECTRON SPECTROSCOPY;

EID: 60449087763     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3067838     Document Type: Article

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