Transparent oxide thin-film transistors composed of Al and Sn-doped zinc indium oxide

IEEE Electron Device Letters

Volumn 30, Issue 1, 2009, Pages 48-50

  Cho, Doo Hee ^a   Yang, Shinhyuk ^a   Byun, Chunwon ^a   Ryu, Min Ki ^a   Park, Sang Hee Ko ^a   Hwang, Chi Sun ^a   Yoon, Sung Min ^a   Chu, Hye Yong ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Oxide; Sputtering; Thin film transistor (TFT); Transparent

Indexed keywords

INDIUM; MAGNETRON SPUTTERING; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS; ZINC;

ACTIVE LAYERS; BOTTOM GATES; FIELD EFFECTS; ON/OFF CURRENT RATIOS; POSTANNEALING TEMPERATURES; RF MAGNETRON SPUTTERING; ROOM TEMPERATURES; SUBTHRESHOLD SWINGS; THIN-FILM TRANSISTOR (TFT); TRANSPARENT; TRANSPARENT OXIDES; ZINC INDIUM OXIDES;

TIN;

EID: 58149522488     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2008732     Document Type: Article

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