High mobility indium free amorphous oxide thin film transistors

Applied Physics Letters

Volumn 92, Issue 22, 2008, Pages

  Fortunato, Elvira M C ^a   Pereira, Luís M N ^a   Barquinha, Pedro M C ^a   Botelho Do Rego, Ana M ^b   Goņalves, Goņalo ^a   Vil̀, Anna ^c   Morante, Juan R ^c   Martins, Rodrigo F P ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^b UNIVERSITY OF LISBON   (Portugal)

^c UNIVERSITY OF BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; COATINGS; GALLIUM; OXIDES; PHOTOACOUSTIC EFFECT; SEMICONDUCTING ZINC COMPOUNDS; SOLIDS; THICK FILMS; THIN FILM DEVICES; THIN FILMS; TIN; TINNING; TITANIUM COMPOUNDS; TRANSISTORS; VAPOR DEPOSITION; ZINC; ZINC OXIDE; ZINC SULFIDE;

AMORPHOUS OXIDES; BOTTOM GATE (BG); ELECTRICAL CHARACTERISTICS; ENHANCEMENT MODE (E MODE); HIGH MOBILITY; POSTANNEALING (PA); POSTANNEALING TEMPERATURES; RF MAGNETRONS; ROOM-TEMPERATURE (RT); SATURATION MOBILITIES; TIN ZINC OXIDE (TZO);

THIN FILM TRANSISTORS;

EID: 44849134063     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2937473     Document Type: Article

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