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Volumn 445, Issue 2, 2003, Pages 155-160
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Doping and hydrogen in wide gap oxides
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Author keywords
Doping; Hydrogen; Oxide; Wide gap
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Indexed keywords
BOND STRENGTH (CHEMICAL);
CHEMICAL BONDS;
DEPOSITION;
DOPING (ADDITIVES);
ELECTRIC CONDUCTANCE;
FIELD EFFECT TRANSISTORS;
HYDROGEN;
IMPURITIES;
MATHEMATICAL MODELS;
MOS DEVICES;
SEMICONDUCTOR MATERIALS;
ATOMIC LAYER DEPOSITION (ALD);
WIDE GAP;
OXIDES;
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EID: 1642343571
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2003.08.013 Document Type: Conference Paper |
Times cited : (63)
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References (22)
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