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Volumn 445, Issue 2, 2003, Pages 155-160

Doping and hydrogen in wide gap oxides

Author keywords

Doping; Hydrogen; Oxide; Wide gap

Indexed keywords

BOND STRENGTH (CHEMICAL); CHEMICAL BONDS; DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTANCE; FIELD EFFECT TRANSISTORS; HYDROGEN; IMPURITIES; MATHEMATICAL MODELS; MOS DEVICES; SEMICONDUCTOR MATERIALS;

EID: 1642343571     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.08.013     Document Type: Conference Paper
Times cited : (62)

References (22)
  • 17
    • 0037852815 scopus 로고    scopus 로고
    • P.E. Blochl, J.H. Stathis, 83 (1999) 372
    • P.E. Blochl, J.H. Stathis, 83 (1999) 372.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.