Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes

Thin Solid Films

Volumn 516, Issue 17, 2008, Pages 5899-5902

  Shimura, Yasuhiro ^a   Nomura, Kenji ^b   Yanagi, Hiroshi ^a   Kamiya, Toshio ^a,b   Hirano, Masahiro ^a,b   Hosono, Hideo ^a,b  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Amorphous semiconductor; Contact resistance; Inorganic semiconductor; Thin film transistor

Indexed keywords

AMORPHOUS SEMICONDUCTORS; CONTACT RESISTANCE; DRAIN CURRENT; SCHOTTKY BARRIER DIODES; THIN FILM TRANSISTORS;

AMORPHOUS OXIDE SEMICONDUCTORS; DRAIN CONTACTS; INORGANIC SEMICONDUCTORS; METALLIC ELECTRODES;

OXIDE SUPERCONDUCTORS;

EID: 44249094185     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.10.051     Document Type: Article

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