Self-aligned top-gate amorphous gallium indium zinc oxide thin film transistors

Applied Physics Letters

Volumn 93, Issue 5, 2008, Pages

  Park, Jaechul ^a   Song, Ihun ^a   Kim, Sunil ^a   Kim, Sangwook ^a   Kim, Changjung ^a   Lee, Jaecheol ^a   Lee, Hyungik ^a   Lee, Eunha ^a   Yin, Huaxiang ^a   Kim, Kyoung Kok ^a   Kwon, Kee Won ^b   Park, Youngsoo ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; GALLIUM; MOLYBDENUM; OHMIC CONTACTS; PLASMA APPLICATIONS; PLASMAS; SURFACE TREATMENT; THIN FILM TRANSISTORS; THIN FILMS; ZINC; ZINC OXIDE;

ACTIVE LAYERS; AR PLASMA TREATMENTS; AR PLASMAS; CONTACT RESISTIVITIES; FIELD-EFFECT MOBILITIES; GALLIUM INDIUM ZINC OXIDES; SELF-ALIGNED; SERIES RESISTANCES; SOURCE/DRAIN REGIONS; SUB-THRESHOLD SWINGS; TOP GATES;

INDIUM;

EID: 51849163602     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2966145     Document Type: Article

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