High mobility InGaZnO4 thin-film transistors on paper

Applied Physics Letters

Volumn 94, Issue 7, 2009, Pages

  Lim, Wantae ^a   Douglas, E A ^a   Kim, S H ^a   Norton, D P ^a   Pearton, S J ^a   Ren, F ^a   Shen, H ^b   Chang, W H ^b  

^a University of Florida   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELLULOSE; DRAIN CURRENT; ELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS;

CELLULOSE PAPERS; ELECTRICAL PROPERTIES; ENHANCEMENT MODES; FLEXIBLE ELECTRONIC DEVICES; HIGH MOBILITIES; ROOM TEMPERATURES; SATURATION MOBILITIES; STRUCTURAL SUPPORTS; SUB THRESHOLDS; VOLTAGE SWINGS;

PAPER;

EID: 60749103290     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3086394     Document Type: Article

References (13)

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